The Dependence of Thermal-Cycling-Induced Failure Mechanism on Topological Feature of Passivated Metallic Conductors in Plastic-Encapsulated Microelectronic Devices

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概要

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• This work presents how thermal-cycling-induced cracking in a device pattern is influenced by manipulating the topological feature of passivated metallic conductors. The modification of the topological feature is done by the variation of the sidewall slope of metallic conductors. In order to compare thermal-cycling reliability in two kinds of devices with different surface morphologies, each device is prepared to have pre-existing cracks along its edge region. The propagation behavior of the cracks is then investigated for each device. Discontinuous but fast crack propagation is observed for the device with the poor topological feature (i.e., 70°-sidewall slope) during thermal-cycling from $-65$ to 150 °C. On the other hand, continuous but limited crack growth is detected for the device with the improved topological feature (i.e., 130°-sidewall slope). The reason why cracking behavior differs, depending on the different re-entrant angle of each device pattern, is explained by numerical calculation. Finite-element method (FEM) work shows that the concentration of shear stress at the re-entrant corner of the passivated metallic conductor with the steep sidewall slope is responsible for such discontinuous crack propagation. Therefore, if the topological feature of passivated metallic conductors is improved, the rapid propagation of the pre-existing crack such as sawing-induced damage into the active device pattern will be effectively prevented to ensure thermal-cycling reliability.

• 2006-10-15

著者

• Lee Seong-Min

  Department of Materials Engineering, Kangwon National University

• Lee Seong-Min

  Department of Materials Science and Engineering, University of Incheon, 177 Dohwa-dong, Nam-ku, Incheon, 402-749, South Korea

関連論文

• Thermal-Stress-Induced Failure in Memory Device Assembled Using Lead-on-Chip Die Attach Technique(Structure and Mechanical and Thermal Properties of Condensed Matter)
• The Dependence of Thermal-Cycling-Induced Failure Mechanism on Topological Feature of Passivated Metallic Conductors in Plastic-Encapsulated Microelectronic Devices
• Processing Strategies for Protecting Integrated Circuit Pattern from Damage Due to a Dicing Saw Blade

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