Characterization of InP/InGaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Layers Grown by Metal-Organic Chemical Vapor Deposition and Molecular Beam Epitaxy

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概要

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• We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-09-15

著者

• Ishizaki Haruya

  System Devices Research Laboratories, NEC Corporation, 9-1 Seiran 2-chome, Otsu 520-0833, Japan

• Tanaka Shinichi

  System Devices Research Laboratories, NEC Corporation, 9-1 Seiran 2-chome, Otsu 520-0833, Japan

• Ikenaga Yoshifumi

  System Devices Research Laboratories, NEC Corporation, 9-1 Seiran 2-chome, Otsu 520-0833, Japan

• Kuroda Naotaka

  System Devices Research Laboratories, NEC Corporation, 9-1 Seiran 2-chome, Otsu 520-0833, Japan

• Fujihara Akira

  NEC Compound Semiconductor Devices, 9-1 Seiran 2-chome, Otsu 520-0833, Japan

関連論文

• Characterization of InP/InGaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Layers Grown by Metal-Organic Chemical Vapor Deposition and Molecular Beam Epitaxy

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