Comparison of Pt-Based Ohmic Contacts with Ti–Al Ohmic Contacts for $ p$-Type SiC

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概要

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• In this study, two Pt-based ohmic contacts were systematically compared with a conventional Ti–Al ohmic contact on $ p$-type 4H– and 6H–SiC substrates in terms of specific contact resistance, contact morphology, and phase chemistry. The average specific contact resistance (SCR) values measured for the Ti/Al, Pt and Pt/Si ohmic contacts on 4H–SiC were $7.0 \times 10^{-5}$ $\Omega$ cm2, $1.5 \times 10^{-4}$ $\Omega$ cm2 and $4.4 \times 10^{-5}$ $\Omega$ cm2, respectively. The corresponding standard deviations of the SCR values are $3.4 \times 10^{-5}$ $\Omega$ cm2, $3.8 \times 10^{-5}$ $\Omega$ cm2 and $1.3 \times 10^{-5}$ $\Omega$ cm2. Microstructural analysis showed that both Ti/Al and Pt ohmic contacts reacted with the SiC substrate during annealing to form several phases and a rough interface. In contrast, single-phase PtSi contacts, formed using the required thickness ratio of $1:1.32$ Pt/Si, yield a smooth interface. A correlation between the electrical properties and the morphology is discussed.

• 2005-08-15

著者

• CAO Y.

  Department of Orthopedic Surgery Kagawa Medical University

• Mohammad F.

  Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A.

• Chang K.-C.

  Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A.

• Porter L.

  Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A.

• Cao Y.

  Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A.

関連論文

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• Comparison of Pt-Based Ohmic Contacts with Ti–Al Ohmic Contacts for $ p$-Type SiC

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