Fabrication of Silicon and Germanium Nanostructures by Combination of Hydrogen Plasma Dry Etching and VLS Mechanism
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概要
- 論文の詳細を見る
Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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YANG Ming-Che
National Nano Device Laboratories
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SHIEH Jiann
National Nano Device Laboratories
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KO Tsung-Shine
Department of Atomic Science, National Tsing Hua University
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Chen Hsuen-Li
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University
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Chu Tieh-Chi
Department of Atomic Science, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Yang Ming-Che
National Nano Device Laboratories, Hsinchu 300, Taiwan, R.O.C.
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Chen Hsuen-Li
Department of Materials Science and Engineering, National Taiwan University, Taipei 100, Taiwan, R.O.C.
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Ko Tsung-Shine
Department of Atomic Science, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Shieh Jiann
National Nano Device Laboratories, Hsinchu 300, Taiwan, R.O.C.
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