Electrical Properties of Holmium-Doped BaTiO3

概要

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The effects of Ho (holmium) doping on the electrical properties and microstructural development of (Ba1-xHox)TiO3 were investigated by means of defect chemistry on the basis of equilibrium electrical conductivity data measured at 1300°C, as a function of oxygen activity. Ho2O3 additions to BaTiO3 up to 0.3 mol% were compensated by electrons under all oxygen partial pressures and the samples exhibited a low insulating resistance at room temperature. However, at $\text{Ho}>0.3$ mol%, the compensation mode switched from electrons to cation vacancies in the region of high oxygen partial pressure. The solubility limit of Ho$_{\text{Ba}}^{\bullet}$ was confirmed to be less than 3.0 mol%. The specimens doped with $\text{Ho}<0.5$ mol% had a low insulating resistance and large grains, whereas high insulating resistance and fine grains were observed in the samples doped with Ho grater than 0.5 mol%.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-06-15