Analysis for Electron Concentrations in n-Diamond/III–Nitride Heterostructure and Phosphorus $\delta$-Doped Structure in Diamond

概要

論文の詳細を見る
In order to explore the possibility of controlling electron concentrations in phosphorus (P)-doped n-diamond, the electron distributions and energy band diagrams of n-diamond/cBN and n-diamond/AlN heterostructures and a P $\delta$-doped structure are calculated by self-consistently solving Poisson and Schrödinger equations. Although the electron concentration is on the order of $10^{11}$ cm-3 at room temperature for uniformly-doped n-diamond with a donor concentration of $5\times 10^{18}$ cm-3 and a compensation ratio of 1%, a modulation doping technique provides an activation efficiency larger than 15% in both the heterostructures and an electron concentration larger than $10^{17}$ cm-3 at room temperature. On the other hand, a $\delta$-doping technique does not increase activation efficiency since the electrons have a large Debye-tailing length and the compensation significantly reduces the electron concentration activated thermally.
2005-01-15