Effects of Substrate Temperature on the Initial Growth of Titanium Silicides on Si(111)
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概要
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The growth of titanium silicide was investigated in sub-monolayer Ti deposited on Si(111)-$7\times 7$. The formation of nanorod and cluster structures was observed for 600 and 700°C deposited samples. In samples heated to 800°C, titanium silicide structures transformed to clusters. C49-TiSi2 nanorods were found to orient along three equivalent Si$\langle2\bar{2}0\rangle$ directions with C49-TiSi2(200)$\parallel$Si($2\bar{2}0$). Deposition of sub-monolayer Ti at a high temperature was found to contribute to the lowering of the formation temperature of C49-TiSi2. The lowering of C49-TiSi2 growth temperature on heated substrate is attributed to smaller lattice mismatch between C49-TiSi2(200) and Si($2\bar{2}0$).
- 2004-07-15
著者
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Chen L.
Department Of Engineering Science National Cheng Kung University
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Hsu H.
Department Of Pathology And Laboratory Medicine University Of Kansas Medical Center
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Liao K.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
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Chiang T.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
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Chiang T.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China
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Chen L.
Department of Applied Chemistry Faculty of Engineering The University of Tokyo
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Hsu H.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China
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