Analysis of Electrical Properties of Grain Boundaries in Polycrystalline Silicon Solar Cell Using Laser Beam Induced Current
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概要
- 論文の詳細を見る
We have investigated the effect of grain boundaries on a polycrystalline solar cell using laser beam induced current (LBIC). We have successfully evaluated the two-dimensional minority carrier diffusion length, which is one of the most important parameters, in order to fabricate high-efficiency polycrystalline solar cells. Based on the carrier lifetime, the numerical recombination velocity at the grain boundaries was obtained. The change of the recombination velocity by the gettering effect was also clarified. We have confirmed that the recombination velocity is improved by the gettering treatment from $2\times 10^{4}--5\times 10^{4}$ cm/s to $3\times 10^{3}--7\times 10^{3}$ cm/s.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Yagi Toshiki
Materials Science Nara Institute Of Science And Technology
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NISHIOKA Kensuke
Materials Science, Nara Institute of Science and Technology
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URAOKA Yukiharu
Materials Science, Nara Institute of Science and Technology
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FUYUKI Takashi
Materials Science, Nara Institute of Science and Technology
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Nishioka Kensuke
Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Fuyuki Takashi
Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
関連論文
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- Analysis of Electrical Properties of Grain Boundaries in Polycrystalline Silicon Solar Cell Using Laser Beam Induced Current