Analysis of Electron Statistics Involving Compensation and Deep-Dopant Effects for Phosphorus-Doped n-Type Diamond

概要

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In order to understand carrier statistics in phosphorus-doped n-type diamond with an ionization energy of 0.6 eV, electron statistics involving compensation and the deep-dopant effect are theoretically analyzed. For n-diamond with a compensation ratio ($c$) larger than $1\times 10^{-4}$, the electron concentration ($n$) at room temperature (RT) is insensitive to the donor concentration ($N_{\text{D}}$) and decreases with increasing $c$ value. On the other hand, for diamond with a $c$ value smaller than $1\times 10^{-4}$, the $n$ value at RT increases with increasing $N_{\text{D}}$ value and is insensitive to the $c$ value. Correspondingly, the length of Debye tailing ($\lambda_{n}$) at RT decreases with increasing $c$ value for n-diamond with $c>1\times 10^{-4}$ and is insensitive to the $c$ value for n-diamond with $c<1\times 10^{-4}$. The $n=10^{14}$ cm-3 and $\lambda_{n}=3$ μm are predicted to be obtained at RT for diamond with a $c$ value smaller than $10^{-5}$ and $N_{\text{D}}$ of $5\times 10^{18}$ cm-3. However, it is found that an increase in temperature is effective in increasing the $n$ value and reducing the $\lambda_{n}$ value. The $n$ value as large as $10^{15}$ cm-3 and the $\lambda_{n}$ value as small as 100 nm are expected to be achieved at an elevated temperature of 473 K.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-06-15