Numerical Calculation of Magneto-Seebeck Coefficient of Bismuth under a Magnetic Field
スポンサーリンク
概要
- 論文の詳細を見る
Seebeck and Nernst coefficients were numerically calculated by solving the Boltzmann equation with relaxation time approximation for bismuth under a magnetic field as functions of the products of cyclotron frequency ($\omega_{\text{c}}$) and relaxation time ($\tau_{0}$), taking into consideration the scattering process of carriers as a function of energy. The relationship between $\omega_{\text{c}}\tau_{0}$ and magnitude of the magnetic field was derived from the definition of mobility, and each coefficient was estimated as a function of the magnetic field. The magneto-Seebeck coefficient was estimated by the addition of the Seebeck coefficient to the Nernst coefficient, and the contribution of thermoelectric effect in the presence of the magnetic field was dominant, being derived from the Seebeck effect. The magnetic field and temperature dependences of the magneto-Seebeck coefficient were evaluated by the use of a two-carrier model and mobility of single-crystal bismuth. The results show that the magneto-Seebeck coefficient can be improved by a factor of 1.3 to 1.4 in the presence of a magnetic field to control the scattering process of the carriers.
- 2004-01-15
著者
-
HASEGAWA Yasuhiro
Graduate School of Science and Technology, Saitama University
-
Shirai Hajime
Saitama Univ. Saitama Jpn
-
Komine Takashi
Ibaraki Univ.
-
Shirai Hajime
Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
-
Komine Takashi
Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
-
Ishikawa Yoshiaki
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
-
Suzuki Atsushi
Chuo Environmental Management Office, Saitama Prefecture, 5-6-5 Kitaurawa, Urawa-ku, Saitama 336-0002, Japan
-
Hasegawa Yasuhiro
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
関連論文
- Synthesis of Novel P-Type Nanocrystalline Si Prepared from SiH_2Cl_2 and SiCl_4 for Window Layer of Thin Film Si Solar Cell
- Influence of Spacing between Master and Slave Media on Magnetic Duplication Characteristics for Perpendicular Recording Media(Recent Progress of High-Density Information Storage)
- Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition
- Evaluation of Thermoelectric Properties in Bi-Microwires by the Harman Method
- Synthesis of Novel P-Type Nanocrystalline Si Prepared from SiH2Cl2 and SiCl4 for Window Layer of Thin Film Si Solar Cell
- Numerical Calculation of Magneto-Seebeck Coefficient of Bismuth under a Magnetic Field
- Micromagnetic Study of Influence of Gd Content on Current-Induced Domain Wall Motion in a Ferrimagnetic Nanowire