Low-Temperature Sintering and Microstructure of Mg4(Nb2-xVx)O9 Microwave Dielectric Ceramic by V Substitution for Nb
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概要
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The effects of microstructure on the microwave dielectric properties of Mg4Nb2O9 (MN) were investigated and the possibility of low-temperature sintering of Mg4(Nb2-xVx)O9 (MNV) by V substitution for Nb was also discussed in this study. The quality factors ($Q{\cdot}f$) of MN ranged from 10338 to 217390 GHz with increasing sintering temperatures up to 1300°C, resulting in the grain growth and densification of the samples. In the case of V substitution for Nb, it was found that the limit of the solid solution is lower than $x=0.125$; the improvements in the sinterability and apparent density of MNV at $x=0.0625$ were recognized at the sintering temperature of 1025°C. The dielectric constants ($\varepsilon_{\text{r}}$) and the $Q{\cdot}f$ values of MNV at $x=0.0625$ sintered at 1025°C were 11.6 and 160256 GHz, respectively. Thus, it was clarified that a small amount of V substitution for Nb is effective in reducing the sintering temperatures and improving the microwave dielectric properties of MNV.
- 2003-09-15
著者
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YOKOI Atsushi
Faculty of Science and Technology, Meijo University, JAPAN
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Ogawa Hirotaka
Faculty Of Engineering Meijo University
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Ohsato Hitoshi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya Institute Of T
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Kan Akinori
Faculty Of Science And Technology Meijo University
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Ohsato Hitoshi
Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Yokoi Atsushi
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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