Ultra-Line-Narrowed High Power F2 Laser System for Microlithography

概要

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An ultra-line-narrowed, ultra-high-repetition-rate, high-power injection locked F2 laser system for 157 nm exposure tools has been developed. The laser system consists of a low-power oscillator laser having an ultra-narrow spectral bandwidth and a high-gain amplifier with a resonator. The injection locked system achieved a spectral bandwidth ${<}0.2$ pm in full width half maximum (FWHM), an output energy ${>}25$ W and an energy stability (3-sigma) ${<}10$% at a 5 kHz repetition rate, parameters that satisfy requirements of high NA refractive type exposure tools. The jitter reduction between the oscillator laser and the amplifier laser is essential for stable synchronization of two-stage (injection locked and master oscillator power amplifier) laser systems. We solved this problem by a specially developed jitter suppression technique and with long-duration oscillator laser pulses.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-07-15