Characteristics of Silica-on-Silicon Platform with Silicon Oxide Treatment for Hybrid Integrated Optical Module

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概要

• 論文の詳細を見る

• To investigate the effects of the silicon oxide process on the characteristics of the silica planar lightwave circuit (PLC) platform, we have compared two silicon oxide formation processes, thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). The thermal oxidation process for forming a silicon oxide layer on the silica platform generates surface defects and a crystobalite crystal phase, resulting in the deterioration of optical waveguide characteristics. However, the silica platform with a silicon oxide layer formed by PECVD has a transparent planar optical waveguide by suppressing the crystal growth of silica due to low processing temperatures.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• Kim Tae-hong

  Information Technology Research Laboratory Electronics And Telecommunications Research Institute

• Yoon Ki-Hyun

  Department of Ceramics Engineering, Yonsei University, Shinchon-Dong, Seoul 120-749, Korea

• Yoon Ki-Hyun

  Department of Ceramic Engineering, Yonsei University

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• Characteristics of Silica-on-Silicon Platform with Silicon Oxide Treatment for Hybrid Integrated Optical Module

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