Dynamic and Static Photo-Responses of n-ZnO/p-Si Photodiodes
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概要
- 論文の詳細を見る
We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Lee J.
Institute Of Medical Science And Department Of Pediatrics Hallym University
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Choi Y.
Institute Of Biology Leiden University Of Leiden
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Lee S.
Information Electronics Engineering, Ewha Womans University, Seoul 120-750, Korea
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Im S.
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
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Choi Y.
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
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Lee J.
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
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