Silicon Doping Induced Increment of Quantum Dot Density
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概要
- 論文の詳細を見る
Low-indium-content self-assembled InGaAs/GaAs quantum dots (SAQD) were grown using solid-source molecular beam epitaxy (MBE) and investigated by atomic force microscopy and photoluminescence (PL) spectroscopy. Silicon, which was doped at different quantum dot (QD) growth stages, markedly increased the density of QD. We obtained high density In0.35Ga0.65As/GaAs(001) quantum dots of $10^{11}$/cm2 at a growth temperature of 520°C. PL spectra and distribution statistics show the high quality and uniformity of our silicon-doped samples. The density increment can be explained using the lattice-hardening mechanism due to silicon doping.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
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Zeng Yiping
Novel Materials Department, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
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Duan Ruifei
Novel Materials Department, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
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Duan Ruifei
Novel Material Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China
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Wang Baoqiang
Novel Materials Department, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
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Zhu Zhanping
Novel Materials Department, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
関連論文
- Enhancement of Exciton–Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
- Silicon Doping Induced Increment of Quantum Dot Density