Low-Temperature Atomic Hydrogen Treatment of SiO2/Si Structures

概要

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Characteristics of the silicon dioxide/silicon metal–oxide–semiconductor (MOS) capacitor structures formed by thermal oxidation of p-type (100) Si with a subsequent treatment by atomic hydrogen were investigated. Atomic hydrogen treatment leads to a decrease in the densities of fixed positive charges and interface states even at low temperatures of 250–450°C. In this temperature range, the temperature of the substrate and the current of the tungsten wire in the treatment process have a small effect on the electrical properties of the investigated structures. As the temperature of the substrate increases, a small reduction in the densities of fixed positive charges and interface states is observed. By this method, improvement of the electrical properties of a MOS capacitor can be obtained within a treatment time as short as 5 min.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-10-15