Effect of Post-treatment on Electrical Properties of Amorphous Hydrogenated Carbon Films Deposited by Gridless Ion Beam Deposition

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概要

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• Amorphous hydrogenated carbon (a-C:H) films were deposited from the gas mixtures of acetylene (C2H2) and argon (Ar) in a gridless ion beam deposition (GIBD) system fed with dc power. Vacuum annealing and hydrogen plasma treatment were performed on the a-C:H films and their effects on the physical and electrical properties of the films were investigated. Film structure and properties were investigated as a function of the C2H2 flow rate by Raman spectroscopy. Through the Raman spectra, we found that the Raman $I_{\text{D}}/I_{\text{G}}$ intensity ratio increases as annealing temperature increases, which indicates a more graphite-like character in the annealed films. The dielectric constant of the annealed a-C:H films was reduced from 3.8 to 2.9 and the thickness also slightly decreased with increasing annealing temperature. However, the leakage current density and dielectric constant of the hydrogen-plasma-treated a-C:H films were clearly lower than the as-deposited a-C:H films.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-01-15

著者

• Huang Hsiu-ling

  Institute Of Materials Science And Engineering National Chiao Tung University

• Li Yan-way

  Institute Of Materials Science And Engineering National Chiao Tung University

• Li Yan-Way

  Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chen Chia-Fu

  Institute of Materials and System Engineering, Mingdao University, 369 Wen-Hua Road, Peetow, Changhua 52345, Taiwan

• Huang Hsiu-Ling

  Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

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