Picosecond Time-Resolved X-Ray Diffraction of a Photoexcited Silicon Crystal
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概要
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Direct observation of the lattice dynamics of a photoexcited silicon crystal is performed by means of picosecond time-resolved X-ray diffraction. X-ray diffraction profiles from 300 ps laser-irradiated Si(111) are obtained at a time step of 50 ps. The results are in quantitative agreement with results of simulations based on dynamical diffraction theory, and are consistent with an interpretation based on acoustic wave propagation.
- 2002-03-15
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