Growth of InMnAsSb/InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
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概要
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New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown on InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements indicated that an InMnAsSb layer grown on InSb at 250°C has higher crystal quality than that grown at 280°C. By the irradiation of light with a wavelength longer than 2 $\mu$m at low temperatures, the magnetization was increased and this light-induced magnetization remained even after the light irradiation ceased. Corresponding to the Raman data, better light-induced ferromagnetic ordering was observed for the samples grown at 250°C.
- 2002-02-28
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