Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in Al0.5Ga0.5As Matrix
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概要
- 論文の詳細を見る
In this paper we describe the memory effect of vertically stacked InAs nanodots in the barrier layer of an Al0.5Ga0.5As/GaAs field-effect (FE) structure, by comparing this effect with that of single-layer InAs nanodots in the same FE structure. These FE structures are grown by molecular beam epitaxy, and Stranski-Krastanow islands are used for the InAs nanodots. The charge-storage effect of the nanodots is analyzed by capacitance–voltage ($C$–$V$) measurement and results in a hysteresis loop caused by stable electron trapping at nanodot potentials. The amount of "net" charge surviving at the stacked nanodots at 300 K is estimated to be ${\sim}\,14$ nC/cm2, whereas that at the single-layer nanodots is nearly zero. These $C$–$V$ characteristics are in good agreement with photoluminescence properties.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-02-28
著者
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LI Shuwei
New Materials Research Center, Osaka Institute of Technology
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Komai Hisayoshi
New Materials Research Center Osaka Institute Of Technology
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Sasa Shigehiko
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Yano Mitsuaki
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Inoue Masataka
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Koike Kazuto
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Li Shuwei
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Komai Hisayoshi
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
関連論文
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- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- Molecular Beam Epitaxial Growth and Characterization of the Vertically Aligned InAs Quantum Dots Embedded in Al_Ga_As
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in Al0.5Ga0.5As Matrix