Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
スポンサーリンク
概要
- 論文の詳細を見る
We describe a new type of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) memory transistor. This offers a clear advantage in term of device size, and is thus suited for future high-density integration of memory. The MIS transistor of the MFMIS structure is formed along the sidewall of a trench, and the MFM capacitor is formed just over the trench, whereby small device size is realized. We fabricated a test device. The gate insulator in the trench was 14-nm-thick SiO2. In the trench, poly-Si was filled and a 200-nm-thick IrO2 layer was deposited on it. This stack of poly-Si and IrO2 functions as the intermediate metal layer. A 500-nm-thick SrBi2Ta2O9 ferroelectric film was formed by the laser ablation technique. A platinum film was deposited as the top electrode. The drain current-gate voltage characteristics of this test device showed the desired a threshold hysteresis curve whose memory window was about 4.5 V for a voltage swing between $-4$ V and 8 V.
- 2001-09-30
論文 | ランダム
- MCP出力チャージの空間分布 : 測定とモデル
- 25aXA-13 日欧共同水星探査計画BepiColombo : Mercury Magnetospheric Orbiterによる水星磁場・磁気圏探査への期待(プラズマ宇宙物理(原子過程・観測・計測2/MHD現象1),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- 非熱的中性粒子観測による月・惑星探査--Chandrayaan-1衛星への観測器(SARA/CENA)搭載
- 笑いでしめくくる (エッセー特集 笑う門には…)
- SS-520-2号機ロケット実験におけるプラズマ波動観測