Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
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概要
- 論文の詳細を見る
Ultrashallow p$^+$/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000°C and annealed for 5 s at 1000°C, for samples with a background doping concentration of $6\times10^{17}$ #/cm3, ultrashallow junction depths of 548 Å and 745 Å, respectively, could be obtained with an implant energy of 0.5 keV@. Also, sheet resistances of 330 $\Omega/\Box$ and 228 $\Omega/\Box$ were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 $\mu$m metal oxide semiconductor field effect transistor (MOSFET) applications.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-04-15
著者
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Kim Young-woo
Department Of Physics Hanyang University-ansan
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Kim Gon-ho
Department Of Nuclear Engineering Seoul National University
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Lim Hyuneui
Advanced Analysis Center Korea Institute Of Science And Technology
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Cho Jeonghee
Department Of Physics Hanyang University-ansan
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Han Seunghee
Advanced Analysis Center Korea Insitute Of Science & Technology
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Jung Hye
Advanced Analysis Center Korea Institute Of Science And Technology
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Kim Ok
Department Of Environmental Engineering Anyang University Anyangshi
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Lee Yeonhee
Advanced Analysis Center Korea Insitute Of Science & Technology
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Lim Hyuneui
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
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Jung Hye
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
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Lee Yeonhee
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
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Cho Jeonghee
Department of Physics, Hanyang University-Ansan, Kyunggi-do 425-791, Korea
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Kim Young-Woo
Department of Physics, Hanyang University-Ansan, Kyunggi-do 425-791, Korea
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Kim Gon-Ho
Department of Physics, Hanyang University-Ansan, Kyunggi-do 425-791, Korea
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Han Seunghee
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
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