Enhancement of the Bandwidth of p-i-n Photodiodes by Utilizing Tandem Structures

概要

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We propose a new method of increasing the maximum 3dB-bandwidth of InGaAs/InP p-i-n photodiodes for optical communication applications. It is demonstrated by calculation that employing tandem structures (p-i-n)N ($N\geqq 2$) enhances the maximum 3dB-bandwidth by a factor of $\sqrt{N}$ after optimizing the i-layer thickness for the side illumination case, although the photosensitivity decreases by a factor of $N$. Conditions imposed on the i-layer thickness for complete carrier recombination in the intermediate n-p junctions are derived.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2001-04-15