Effects of Crystallization Annealing Sequence for SrBi2Ta2O9 (SBT) Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
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概要
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SrBi2Ta2O9 (SBT) film was crystallized to form fine grains and a smooth surface by rapid thermal annealing (RTA), but form large grains and a rough surface by main furnace annealing. The sequence of furnace annealing was changed to improve the morphology of the Pt/SBT interface and the leakage property of a Pt/SBT/Pt capacitor. For the conventional sequence of furnace annealing before top electrode deposition, the capacitor showed a good switching polarization (P*-P∧) of 17 $\mu$C/cm2 but a high short fail rate of 56% due to the rough Pt/SBT interface. However, using the new sequence of furnace annealing after top electrode deposition on RTA-treated SBT film, a very smooth Pt/SBT interface and a resultant low short fail rate of 7% was obtained, but the value of P*-P∧ was decreased to 14 $\mu$C/cm2 due to a restrained grain growth of the SBT film under Pt top electrode.
- 2000-09-30
論文 | ランダム
- 眼と頭の協同運動検査 (現代臨床機能検査--その実際と解釈) -- (脳・神経・筋機能検査)
- エネルギ-と情報革新 (一橋大学イノベ-ション研究センタ-発足記念論文集『イノベ-ション研究の課題と展望』)
- 林学教育の始まり
- 「島根の木炭産業史」島根木炭史編集委員会編
- 切断解体技術 ダイヤモンドワイヤーソー工法 (特集 廃止措置の到達点--原子力発電所の高経年化時代を控え) -- (進展する廃止措置の必要技術)