A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for Code-Division-Multiple-Access Cellular System

概要

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A silicon Class-B complementary push-pull power amplifier for a code-division-multiple-access IS-95 cellular system has been proposed for the first time. 0.8-$\mu$m complementary metal-oxide-semiconductor (CMOS) devices are fabricated and evaluated using RF measurement and simulation. The RF-CMOS balanced design between n- and p-MOS devices has been investigated. From RF simulation, a power-added efficiency (PAE) of over 60% at an input power of 5 dBm and an adjacent-channel-power-ratio of ${-}42$ dBc are obtained. It is found that both high efficiency and high linearity are obtained using the RF-CMOS balanced design with optimized channel length and width. Furthermore, drain voltage control for IS-95 criteria has been proposed in addition to the balanced design. The overall PAE, which is defined as the PAE multiplied by the probability distribution function of the used power-level and integrated over the entire used power range, has been improved up to 49%.
2000-04-30