Growth of Ga0.46In0.54NyAs1-y Single Quantum Wells on InP(100) Substrate by Metalorganic Chemical Vapor Deposition

概要

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GaInNAs has been demonstrated as a 1 eV material that is lattice-matched to GaAs. Similarly, it is expected that for GaInNAs, which is lattice-matched to InP with an In content of over 50%, a band gap from 0.7 to 0.3 eV should be achievable if a few percent N could be incorporated. A Ga0.46In0.54NyAs1-y/InP single quantum well (SQW) structure grown at a relatively high growth temperature has been attempted. Low AsH3 partial pressure appeared to enhance N incorporation. A strong photoluminescence (PL) emission was observed without post-growth annealing at the growth temperature of 650 to 680°C. For our reactor, the PL properties of GaInNAs appeared to improve for the growth pressure of 120 Torr since a narrow PL linewidth as low as 32 meV was obtained at that pressure. In the low-temperature PL measurement, blue shift was observed.
2000-10-15