Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

概要

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Boron nitride (BN) films with a high cubic phase content have beensynthesized. The films are deposited by reactive sputtering of a pure boron target inelectron cyclotron resonance (ECR) plasmas and ion bombardment to asubstrate is enhanced by rf biassing of the substrate. A cubic phase of BN is grown over a certain threshold value of ionbombardment energy. The threshold and the cubic phase content depend on the ratio of ionflux to boron atom flux to the substrate. The threshold decreases as the ratio increases; however, the cubicphase content also decreases, particularly in a high ion flux region. BN films with a high cubic phase content show surface cracking anddelamination because of the high compressive stress induced by ionbombardment. An intermediate hexagonal BN layer, of a certain thickness between layerwith high cubic phase content and the substrate prevents surfacecracking and improves film adhesion.
1999-07-30