The Excimer Laser-induced Ripple Structures at the Interfaces of Silicon-dioxide/Silicon Substrates
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概要
- 論文の詳細を見る
Excimer laser-induced surface structures at the interfaces of silicon dioxide/silicon have been investigated experimentally. It is found that a stable, fine and homogeneous ripple structure is preferentially generated under a comparatively larger laser beam. The ripple periodicity seems to have no angular dependence and is enhanced with the increased laser pulses for the first a few pulses. The initial substrate temperature also represents an important parameter which can be used to control the interface ripple structures. The threshold pulse number for the ripple formation at different laser fluence, or at different oxide thickness is studied as well. This study will be helpful in understanding the physics of laser-induced ripple formation, and hence be useful in controlling the ripple structures within the range required for the laser texturing of the high density magnetic recording media.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-06-15
著者
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Lu Yong
Laser Microprocessing Laboratory Department Of Electrical Engineering And Data Storage Institute Nat
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Yu Jian
Laser Microprocessing Laboratory Department Of Electrical Engineering And Data Storage Institute Nat
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Choi Wee
Laser Microprocessing Laboratory Department Of Electrical Engineering And Data Storage Institute Nat
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Choi Wee
Laser Microprocessing Laboratory,
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Yu Jian
Laser Microprocessing Laboratory,
関連論文
- The Excimer Laser-induced Ripple Structures at the Interfaces of Silicon-dioxide/Silicon Substrates
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- The Excimer Laser-induced Ripple Structures at the Interfaces of Silicon-dioxide/Silicon Substrates
- Steam Laser Cleaning of Plasma-Etch-Induced Polymers from Via Holes