Effects of the Annealing Temperature and CdCl2 Treatment on the Photovoltaic Properties of the CdS/CdTe Solar Cell
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概要
- 論文の詳細を見る
Effects of the annealing temperature and CdCl2 treatment of CdTe films prepared by vacuum evaporation on structural properties of the CdTe films and photovoltaic properties of thin film CdS/CdTe solar cells were investigated. The crystal structure of as-deposited CdTe films was zincblende type with preferential orientation of the (111) plane parallel to the substrate. The preferential orientation of the (111) plane in CdTe films decreased, and the grain size of CdTe films increased with the increase of the annealing temperature and the CdCl2 treatment. As increasing annealing temperature, the conversion efficiency of the CdS/CdTe solar cells without and with CdCl2 was increased due to increasing grain size and improving crystalline of CdTe films. However, the efficiency of cells annealed at the temperature of higher than 500°C for cells without CdCl2 treatment and 450°C for cells with CdCl2 treatment was reduced because of increasing reverse saturation current density and series resistance.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-15
著者
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Lee Jae-hyung
Department Of Civil And Earth Resources Engineering Kyoto University
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Shin Sung-ho
Inorganic Chemistry Division National Institute Of Technology And Quality Kwachun
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Park Kwang-ja
Inorganic Chemistry Division National Institute Of Technology And Quality Kwachun
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Park Yong-kwan
Department Of Electrical Engineering Sungkyunkwan University
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Park Yong-Kwan
Department of Electrical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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Shin Sung-Ho
Inorganic Chemistry Division, National Institute of Technology and Quality Kwachun, Kyunggi-do, 472-760 Korea
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Park Kwang-Ja
Inorganic Chemistry Division, National Institute of Technology and Quality Kwachun, Kyunggi-do, 472-760 Korea
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Lee Jae-Hyung
Department of Electrical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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Lee Ho-Yeol
Department of Electrical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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textscLee Ho-Yeol
Department of Electrical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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