Characterization of RF-Enhanced DC Sputtering to Deposit Tin-Doped Indium Oxide Thin Films

概要

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The effect of RF (13.56 MHz) enhancement in a DC magnetron sputtering process was studied using a one-turn coil above a tin-doped indium oxide (ITO) target. The minimum operating pressure or the minimum operating voltage was reduced to less than one-half by the assistance of RF plasma. The processing plasma was characterized quantitatively in terms of plasma potential (Vp), floating potential (Vf), electron density (Ne), and electron temperature (Te) using a Langmuir probe. The probe measurements were also verified using optical emission spectroscopy. Vp and Vf increased with increasing RF coil power (Pc) and were strongly dependent on the target voltage. Ne increased from 3.7×108 /cm3 at Pc=10 W to 1.3×109 /cm3 at Pc=50 W at a target voltage of -200 V. At the target voltage of -300 V, Ne increased slightly from 1.0×109 /cm3 at Pc=10 W to 1.2×109 /cm3 at Pc=50 W, whereas Te showed almost no dependence on the RF coil power. Te was strongly dependent on the target voltage, being significantly higher at -200 V as compared to -300 V. The crystallinity of the deposited ITO films was found to increase with increasing RF coil power.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1998-11-15