Influence of Low Dielectric SiOF Film on Metal Oxide Semiconductor Field Effect Transistor Characteristics and Its Impact on Circuit Performance

概要

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A low dielectric fluorine-doped silicon oxide (SiOF) film, which was produced by adding C2F6 to the conventional chemical vapor deposited oxide, was applied to a 0.35 µm complementary metal oxide semiconductor (CMOS) and its influence on metal oxide semiconductor field effect transistor characteristics was analyzed. A shift of the transconductance was observed when the SiOF film was used as an intermediate dielectric and the Si3N4 film as the dielectric on the metal. An improvement in speed of 13% due to the SiOF film was experimentally confirmed under the condition where the transconductance does not show a shift. Using circuit simulations, the necessity for such low dielectric films as the SiOF film, on the scaling trend in the improvement of circuit performance, was clearly shown and was also emphasized from the point of view of power reduction. It was revealed that circuit speed and power consumption of 0.35 µm CMOS were degraded if the SiOF film was not used, because the improvement of the transistor performance did not overcome the increase in interconnect capacitance due to the increase in the adjacent interconnect capacitance component.
1998-11-15