Characteristics of Parallel-Plate RF Discharges in C 4F 8 Gas and C 4F 8/O 2 Mixtures

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概要

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• The discharge characteristics in a range of driving frequencies from 400 kHz to 1 MHz have been investigated by current-voltage measurements and optical emission spectroscopy. At pressures higher than 0.2 Torr, the discharge impedance is resistive, and the intense emission just in front of the instantaneous anode due to the double layer is observed around the phases of ωt=π/2 and 3π/2. These results are similar to those in strong electronegative SF6 discharges. On the other hand, at 0.1 Torr, the discharge impedance is capacitive, and the discharge is of the so-called wave-riding mode. The discharge structure at 1 MHz is scarcely changed by mixing a large amount O2 with C4F8 at a pressure of 0.5 Torr due to the high electronegativity of C4F8.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• SAITO Yukinori

  Faculty of Engineering Yamanashi University

• Ishikawa Itsuo

  Faculty Engineering Yamanashi University

• HIROSE Yuuji

  Faculty of Engineering, Yamanashi University

• Suganomata Shinji

  Faculty Engineering Yamanashi University

• Aoyagi Kenji

  Faculty Of Engineering Yamanashi University

• Nagaseki Kazuya

  Tokyo Electron Ltd., Nirasaki 407-01, Japan

• Aoyagi Kenji

  Faculty of Engineering, Yamanashi University, Kofu 400, Japan

• Suganomata Shinji

  Faculty of Engineering, Yamanashi University, Kofu 400, Japan

• Hirose Yuuji

  Faculty of Engineering, Yamanashi University, Kofu 400, Japan

• Saito Yukinori

  Faculty of Engineering, Yamanashi University, Kofu 400, Japan

関連論文

• Electron Temperature in RF Discharge Plasma of CF_4/N_2 Mixture
• Mass Spectrometry of Discharge Products at 13.56 MHz in SF_6 Gas ( Plasma Processing)
• Spatiotemporal Profiles of Optical Emission Spectra in CF_4 Discharges at 1 MHz ( Plasma Processing)
• Low-Frequency Waves in SF_6 Positive Columns Diluted with N_2 Gas
• Attachment-Enhanced Instability in CF_4 Positive Columns
• Forward Waves Excited by Pulsed Electron Beam Injection into Low-Pressure N_2 Gas
• Discharge and Oscillation due to Axial Injection of an Impulsive Electron Beam into SF_6 Gas
• Positive Ions in RF Discharge Plasmas of C_4F_8/Ar and C_4F_8/O_2 Mixtures
• Positive Ions in C_4F_8 RF Discharge in a Planar Diode
• Characteristics of Parallel-Plate RF Discharges in C_4F_8 Gas and C_4F_8/O_2 Mixtures
• Ionic Species in 13.56 MHz Discharges in CF_4 Gas and Mixtures of It with Ar and O_2
• Positive and Negative Ions in RF Plasmas of SF_6/N_2 and SF_6/Ar Mixtures in a Planar Diode
• Positive Ions in RF Discharge Plasma of CF_4 Gas in a Planar Diode
• Negative Ions in 13.56 MHz Discharge of SF_6 Gas in a Planar Diode
• Mass Spectrometrie Observation of Decomposition Products SF_x (x=1,2) in SF_6 Discharge at 13.56 MHz
• Characteristics of 1MHz Discharge in SF_6/O_2 Mixture in a Parallel-Plate System
• Characteristics of 1-MHz Discharges in SF_6/Ar and CF_4/Ar Mixtures in a Parallel-Plate System
• Mode Change of 1 MHz Discharge in O_2 Gas at Low Pressure
• Detection Technique of Negative Ions by Photodetachment in SF_6 Low-Frequency Discharge
• Spatiotemporal Variation of Light Emission from SF_6 Parallel-Plate Discharge at Frequencies of 100 and 500 kHz
• Anomalous Photoemission under the Influence of a Charged Substrance in Low-Frequency Parallel-Plates Discharge in N_2 Gas
• Asymmetrical Emission Profiles from Low-Frequency Discharges in SF_6 and in N_2 Gases in a Planar Diode with a Si-Wafer
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• Photoemission Profiles in Parallel-Plate RF Discharge in SF_6 Gas
• Ionic Species in 13.56 MHz Discharges in CF 4 Gas and Mixtures of It with Ar and O 2
• Characteristics of Parallel-Plate RF Discharges in C 4F 8 Gas and C 4F 8/O 2 Mixtures
• Focal Lengths of High-T c Sintered Superconducting Lenses (Supertrons) for Intense Electron Beams
• Positive Ions in C 4F 8 RF Discharge in a Planar Diode

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