Monte Carlo Modeling of Transient Effects in Resonant-Tunneling Bipolar Transistors

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概要

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• Transient behavior of bipolar transistors with a quantum-well base and a resonant-tunneling structure in the collector is studied using the ensemble Monte Carlo particle method. The switch on/off processes as a response to trigger pulses of the collector voltage and the base current are simulated. The amplitudes and duration of the pulses providing reliable switching are obtained.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Ryzhii Maxim

  University Of Aizu

• Ryzhii Maxim

  University of Aizu, Aizu-Wakamatsu 965-80, Japan

関連論文

• High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
• Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
• Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
• Monte Carlo Modeling of Transient Effects in Resonant-Tunneling Bipolar Transistors
• Monte Carlo Modeling of Electron Transport and Capture Processes in AlGaAs/GaAs Multiple Quantum Well Infrared Photodetectors
• Monte Carlo Modeling of Transient Effects in Resonant-Tunneling Bipolar Transistors

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