Ce-Activated SrS Thin Film Electroluminescent Devices Fabricated by Multi Source Deposition Using Ga2S3 Precursor
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概要
- 論文の詳細を見る
For the first time, cerium-doped strontium sulfide (SrS:Ce) thin film electroluminescent (TFEL) devices have been fabricated by multi source deposition using Ga2S3 compound. Ga2S3 is able to provide elemental sulfur without leaving Ga in the phosphor films. This new precursor is excellent for controlling the sulfur supply, due to its low vapor pressure. Highly crystalline SrS thin films have been deposited with preferentially (200)-oriented. Full width at half maximum of the X-ray diffraction peak is 0.22°. The composition of the thin film is close to the stoichiometry, and the element Ga was not detected in the film. The TFEL device shows a luminance level of 160 cd/m2 at 40 V above the threshold voltage, and the CIE color coordinates are x=0.30 and y=0.51.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-07-15
著者
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Okamoto Shinji
Nhk Science And Technical Research Laboratories
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TANAKA Katsu
NHK Science and Technical Research Laboratories
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TAKIZAWA Kuniharu
NHK Science and Technical Research Laboratories
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INOUE Yoji
NHK Science and Technical Research Laboratories
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KOBAYASHI Kikuo
NHK Science and Technical Research Laboratories
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Tanaka Katsu
NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157, Japan
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Inoue Yoji
NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157, Japan
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