Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF4 Plasma
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概要
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Carbonous film was deposited on silicon wafer in CF4 plasma when the silicon wafer was irradiated by synchrotron radiation (SR). The deposition rate was 183 Å/min at a SR intensity of 1.43 W/cm2, DC discharge voltage of 700 V, discharge current of 6 mA and CF4 gas pressure of 0.13 Torr. The film was characterized by Auger electron spectroscopy. The deposition mechanism of the film was due to photoexcitation of the silicon surface by SR irradiation.
- 1996-02-15
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