Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors

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概要

• 論文の詳細を見る

• We examined the effects of the deposition sequence on the threshold voltage and field-effect mobility in amorphous silicon thin-film transistors. When the nitrides are deposited after the a-Si:H(normal), the threshold voltages become more positive, and the field-effect mobilities are lower than with the inverted sequence. Photoluminescence measurements reveal that the tail states in the a-Si:H near the a-Si:H/a-SiNx interface for the normal sequence are wider than for the inverted sequence.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-11-20

著者

• YOSHIMURA Tetsuzo

  Fujitsu Laboratories Ltd.

• Hiranaka Kouichi

  Fujitsu Laboratories Ltd.

• YAMAGUCHI Tadahisa

  Fujitsu Laboratories Ltd.

• Hiranaka Kouichi

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01

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