Observation of Extremely High Current Densities on Order of MA/cm^2 in Copper Phthalocyanine Thin-Film Devices with Submicron Active Areas

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概要

• 論文の詳細を見る

• Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 µm^2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density–voltage (J–V) measurements, we found that the device with the smallest active area of 0.04 µm^2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm^2 due to improved thermal management. The J–V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range of current densities between nA/cm^2 and MA/cm^2.

• The Japan Society of Applied Physicsの論文
• 2007-12-25

著者

• Matsushima Toshinori

  Core Research For Evolutional Science And Technology Program Japan Science And Technology Agency

• Adachi Chihaya

  Core Research for Evolutional Science and Technology Program, Japan Science and Technology Agency, 1-32-12 Higashi, Shibuya, Tokyo 150-0011, Japan

関連論文

• Highly efficient carrier injection and transport in Organic Light Emitting Diodes
• Observation of Extremely High Current Densities on Order of MA/cm^2 in Copper Phthalocyanine Thin-Film Devices with Submicron Active Areas

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