Enhancement of Room Temperature Photoluminescence from InAs Quantum Dots by Irradiating Mn
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概要
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We performed Mn irradiation on InAs quantum dots (QDs) at low substrate temperature to introduce Mn atoms into InAs QDs efficiently without damage. In this method, Mn atoms are located near the upper part of dots, which was confirmed by atomic depth profiles measured by X-ray photoelectron spectroscopy (XPS) combined with sputtering. Moreover, temperature dependence of photoluminescence (PL) showed Mn-impurity diffusing into InAs QDs reduced the internal quantum efficiency at low temperature range, and at room-temperature PL was enhanced by irradiating Mn. It is considered that p-doping suppresses hole thermalization and improve the internal quantum efficiency.
- 2007-09-25
著者
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Arakawa Yasuhiko
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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TSUKAMOTO Shiro
Nanoelectronics Collaborative Research Center, The University of Tokyo
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Shimoda Masahiko
Photocatalytic Materials Center National Institute For Materials Science
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Arakawa Yasuhiko
Nanoelectronics Collaborative Research Center, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Nagahara Seiji
Nanoelectronics Collaborative Research Center, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Tsukamoto Shiro
Nanoelectronics Collaborative Research Center, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Tsukamoto Shiro
Nanoelectronics Collaborative Research Center, IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Shimoda Masahiko
Photocatalytic Materials Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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