The Study of Effective Work Function Modulation by As Ion Implantation in TiN/TaN/HfO2 Stacks

概要

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The impact on the metal gate effective work function (EWF) of As ion implantation through TiN/TaN/HfO2 gate stack was investigated. An As implantation at 20 KeV reduces the flat-band voltage ($V_{\text{FB}}$) for TiN/TaN/HfO2 capacitors (or equivalently reduces the EWF) by a maximum of 600 mV at a dose of $5\times 10^{15}$ cm-2. This $V_{\text{FB}}$ reduction is correlated to the As pile-up at the TaN–HfO2 interface, as evidenced by a secondary ion mass spectroscopy (SIMS) study. The As ion accumulation at the interface of the gate electrode–dielectric interface is suggested to induce an interface dipole, contributing to the observed phenomena.
Japan Society of Applied Physicsの論文
2007-04-25