Selective Lasing of Guided Modes from Hollow Square Semiconductor Microcavities
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概要
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We demonstrated the selective lasing of guided modes from hollow square microcavities having an InGaAsP/InGaAs quantum well gain layer. For hollow square cavities with symmetric convex corners, ring-type whispering gallery modes (WGMs) originating from total reflections of light at the four corners were lased. By modifying the corner shape to be asymmetric and concave, guided modes originating from total reflections at the inner and outer flat boundaries were selectively lased. We determined that the lasing modes were guided modes by analyzing measured spectra. The observed quality factor $Q$ was smaller than that of ring-type WGMs owing to enhanced total reflection loss.
- 2007-04-25
著者
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Moon Hee-jong
Department Of Optical Engineering Sejong University
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Hyun Kyung-sook
Department Of Optical Engineering Sejong University
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Hyun Kyung-Sook
Department of Optical Engineering, Sejong University, Seoul 143-747, Korea
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