Nonlinear Optical Properties of the Lanthanum-Modified Lead Zirconate Titanate Ferroelectric Thin Films Using $Z$-Scan Technique
スポンサーリンク
概要
- 論文の詳細を見る
Lanthanum-modified lead zirconate titanate (Pb,La)(Zr,Ti)O3 (PLZT) ferroelectric thin films with perovskite structure were fabricated on quartz substrates by rf magnetron sputtering at 650 °C. Their optical fundamental constants (the band gap, linear refractive index, and absorption coefficient) were obtained through optical transmittance measurements with the envelope method. The nonlinear optical properties of the PLZT films were investigated by the $Z$-scan technique. The films display strong nonlinear optical effects. A negative nonlinear refractive index $n_{2}$ is determined to be $1.21\times 10^{-6}$ esu in the films. These results show that the PLZT ferroelectric thin films are promising materials for nonlinear optics.
- 2007-01-25
著者
-
Zhang Jihua
State Key Laboratory Of Electronic Thin Films And Integrated Devices University Of Electronic Scienc
-
Hu Wencheng
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Lin Hui
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Chen Hongwei
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
-
Chen Hongwei
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Yang Chuanren
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
-
Leng Wenjian
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Ji Hong
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Tang Jinlong
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Qin Wenfeng
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Li Junjian
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Gao Lifeng
Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, People's Republic of China
-
Li Junjian
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Gao Lifeng
Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, People's Republic of China
-
Qin Wenfeng
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Leng Wenjian
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Tang Jinlong
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Yang Chuanren
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
-
Ji Hong
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
関連論文
- Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO--Al2O3--SiO2 System
- Optimized Process of Mn-Doped Ba0.5Sr0.5TiO Thin Films on Platinum Coated Sapphire Substrates
- Nonlinear Optical Properties of the Lanthanum-Modified Lead Zirconate Titanate Ferroelectric Thin Films Using $Z$-Scan Technique