Erbium-Doped ZnO Prepared by Vapor-Phase Transport
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概要
- 論文の詳細を見る
Erbium-doped ZnO has been prepared by vapor-phase transport. ZnO powder, graphite powder, and Er2O3 powder were mixed at a molar ratio of $1:1:0.2$ and heated at 1054 °C. Erbium-doped ZnO was deposited on $n$-type (100)Si wafers located in the same temperature zone. The photoluminescence of the as-deposited sample shows a strong ZnO band-gap emission near 378 nm. After annealing, green emissions at 548, 566, 576, 585, and 595 nm were observed, which correspond to the $4 f$ inner shell transition of erbium from 2H11/2 to 4I15/2 and 4S3/2 to 4I15/2. Our results indicate that vapor-phase transport is an alternative route for doping ZnO with erbium.
- Japan Society of Applied Physicsの論文
- 2006-09-25
著者
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Yang Shih-hsuan
Department Of Computer Science And Information Engineering National Taipei University Of Technology
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Su Chien-Ying
Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsin Chu, Taiwan 300, Republic of China
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Liau Chung-Chi
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China
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Huang Jian-Wei
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China
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Yang Shih-Hsuan
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China
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Chen Jyh-Shin
Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsin Chu, Taiwan 300, Republic of China
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Chao Liang-Chiun
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China
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Chiang Ping-Chang
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China
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