Investigation of Current on the Conducting Target Biased with a Large Negative Potential in the Non-Uniform Plasma

スポンサーリンク

概要

• 論文の詳細を見る

• It was investigated the current on a biased target in the non-uniform plasma. The argon plasma was generated at the low pressure of 0.5–5 mTorr and the stainless steel target was biased with 0.2–6 kV negatively. The target current increases with increasing the target voltage due to the non-uniform plasma distributed near the target, which follows the Child law. The secondary emission current, following the square root of target voltage, is superposed to the ion current. For the higher pressures of larger than 1.5 mTorr, the target current is larger than the expected current of Bohm current plus the secondary emission current. The deviation increases drastically with increasing the operating pressure, which may due to the local ionization near the target. This phenomenon is important to understand more accurately the high voltage sheath formation in practices.

• Japan Society of Applied Physicsの論文
• 2006-07-25

著者

• Ko Kwang-cheol

  Department Of Electrical And Computer Engineering Hanyang University

• Choe Jae-myung

  Department Of Nuclear Engineering Seoul National University

• Kim Gon-ho

  Department Of Nuclear Engineering Seoul National University

• Hwang Yong-seok

  Department Of Electronics Engineering Pusan National University

• CHUNG Kyoung-Jae

  Department of Nuclear Engineering, Seoul National University

• HWANG Hui-Dong

  Department of Electrical Engineering, Hanyang University

• Hwang Hui-Dong

  Department of Electrical Engineering, Hanyang University, Seoul 133-791, Korea

• Ko Kwang-Cheol

  Department of Electrical Engineering, Hanyang University, Seoul 133-791, Korea

• Choe Jae-Myung

  Department of Nuclear Engineering, Seoul National University, Seoul 151-744, Korea

• Hwang Yong-Seok

  Department of Nuclear Engineering, Seoul National University, Seoul 151-744, Korea

関連論文

• Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
• Characterization of 'Hanbit' ECR plasma by using electric probe system
• Investigation of Current on the Conducting Target Biased with a Large Negative Potential in the Non-Uniform Plasma
• Design and Fabrication of Variable Focusing Lens Array Using Liquid Crystal for Integral Photography
• Magnetic Presheaths in Collisionless and Collisional, Magnetized Plasmas
• Etching of Multi-Walled Carbon Nanotubes Using Energetic Plasma Ions
• Modeling of Electromagnetic Wave Propagation with Tapered Transmission Line (Special Issue : Advanced Electromaterials)
• Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
• Side-Extraction-Type Secondary Emission Electron Gun Using Wire Ion Plasma Source
• Investigation of Current on the Conducting Target Biased with a Large Negative Potential in the Non-Uniform Plasma

スポンサーリンク