InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the inductively coupled plasma etching of InP-based materials for photonic-crystal (PC) device fabrication. By optimizing bias power and gas pressure, circular holes with a diameter of ${<}0.2$ μm, a depth of 2.0 μm and a maximum aspect ratio of 13 were formed with an $e$-beam resist mask. This technique was applied to the fabrication of PC-slab devices, and a single-point-defect PC laser was demonstrated at room temperature.
- Japan Society of Applied Physicsの論文
- 2006-01-25
著者
-
Ide Toshihide
Department Of Electrical And Computer Engineering Yokohama National University
-
Mizuta Eiichi
Department Of Electrical And Computer Engineering Yokohama National University
-
Nozaki Kengo
Department Of Electrical And Computer Engineering Yokohama National University
-
Hashimoto Jun-ichi
Department Of Electrical And Computer Engineering Yokohama National University
-
Baba Toshihiko
Department Of Electrical And Computer Engineering Yokohama National University
-
Hashimoto Jun-ichi
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
-
Ide Toshihide
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
-
Mizuta Eiichi
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
関連論文
- Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication
- H-Tree-Type Optical Clock Signal Distribution Circuit Using a Si Photonic Wire Waveguide : Optics and Quantum Electronics
- Dispersion-controlled slow light in photonic crystal waveguides
- Mach-Zehnder Interferometers Composed of μ-Bends and μ-Branches in a Si Photonic Wire Waveguide
- Spectral and polarization characteristics of photonic crystal under normally incident light and their tuning with liquid crystal control
- Recent Progress on Microdisk Lasers
- [invited]Recent Progress on Microdisk Lasers
- Low Loss Intersection of Si Photonic Wire Waveguides
- Photonic molecules in photonic crystals
- All semiconductor low-Δ photonic crystal waveguide for semiconductor optical amplifier
- InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication
- Reduction in sidelobe level in ultracompact arrayed waveguide grating demultiplexer based on Si wire waveguide
- Very Compact Arrayed-Waveguide-Grating Demultiplexer Using Si Photonic Wire Waveguides
- Lasing characteristics of 12-fold symmetric quasi-periodic photonic crystal slab nanolasers
- Photonic crystal slow light devices fabricated by CMOS-compatible process
- Mach–Zehnder Interferometers Composed of $\mu$-Bends and $\mu$-Branches in a Si Photonic Wire Waveguide