High-Voltage 4H–SiC Schottky Barrier Diodes Fabricated on ($03\bar{3}8$) with Closed Micropipes

概要

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Ni/4H–SiC Schottky barrier diodes have been fabricated on homoepitaxial layers grown on 4H–SiC($03\bar{3}8$) substrates. Micropipes existing in the substrates were almost completely dissociated during epitaxial growth. Schottky barrier diodes processed on the areas with closed micropipes exhibited low leakage current, at least, up to 1 kV. The difference in breakdown voltage between micropipe-free diodes and diodes with closed micropipes was less than 10%. A 2.9 kV–22 m$\Omega$$\cdot$cm2 diode was realized on the area with closed micropipes.
2003-01-15