Highly Anisotropic and Corrosionless PtMn Etching Using Pulse-Time-Modulated Chlorine Plasma

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概要

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• Thin PtMn films have recently been used in magnetic devices such as magnetoresistive random access memories (MRAMs). A general problem with this material is that it is relatively inert during conventional plasma processes, and thus alternative methods such as ion milling, lift-off and electroplating have been employed for pattern transfer. As the density of magnetic memories increases toward the Gbit range, the film must be patterned at sub-micron widths. To achieve this requirement, we propose pulse-time-modulated plasma etching. We found that highly anisotropic PtMn etching could be achieved with smooth and corrosionless sidewalls using pulse-time-modulated (TM) chlorine plasma at a pulse time of 10 to 100 μs. We concluded that the incident Cl- could enhance the chemical reaction on the PtMn surface.

• Japan Society of Applied Physicsの論文
• 2003-10-15

著者

• Kumagai Shinya

  Intelligent Nano-process Laboratory Institute Of Fluid Science Tohoku University

• SAMUKAWA Seiji

  Intelligent Nano-Process laboratory, Institute of Fluid Science, Tohoku University

• Shiraiwa Toshiaki

  Micro Systems Network Company, Sony Corporation, Atsugi Tec., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Samukawa Seiji

  Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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• Highly Anisotropic and Corrosionless PtMn Etching Using Pulse-Time-Modulated Chlorine Plasma

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