Room Temperature Formation of Crystallized Palladium Silicide on Si(111) Observed by Ultrahigh Voltage Electron Microscopy
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概要
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The structure of products formed by Pd deposition on a Si(111) substrate at room temperature has been investigated by cross-sectional ultrahigh voltage electron microscopy. Samples were prepared by cleavage so as to eliminate any artifacts accompanying a conventional atom thinning process. Thus we could carry out all procedures at room temperature. Crystalline islands were observed on a Si substrate, and the fringes in the islands suggest that the islands were Pd2Si. We found that the silicide tends to grow epitaxially; however, the silicide misoriented about 6° toward the $\langle\bar{1}\bar{1}2\rangle$ direction of the Si substrate.
- 2002-03-15
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