Experimental Staggered-Source and N+ Pocket-Doped Channel III--V Tunnel Field-Effect Transistors and Their Scalabilities
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概要
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In this paper, we experimentally demonstrate 100% enhancement in drive current ($I_{\text{ON}}$) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket ($\delta$)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length ($\lambda_{\text{eff}}$) for the double gate, thin-body configuration of the staggered heterojunction and $\delta$-doped channel TFETs. The extracted $\lambda_{\text{eff}}$ is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.
- 2011-02-25
著者
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Li Yuanyuan
Department Of Dermatology The Pla General Hospital
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Narayanan Vijaykrishnan
Department of Computer Science and Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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Mayer Theresa
Department of Electrical Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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Agrawal Ashish
Department of Electrical Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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Mohata Dheeraj
Department of Electrical Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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Mookerjea Saurabh
Department of Electrical Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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Liu Amy
IQE Inc., Bethlehem, PA 18015, U.S.A.
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Loubychev Dmitri
IQE Inc., Bethlehem, PA 18015, U.S.A.
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Fastenau Joel
IQE Inc., Bethlehem, PA 18015, U.S.A.
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Datta Suman
Department of Electrical Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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Li Yuanyuan
Department of Electrical Engineering, Pennsylvania State University, University Park, PA 16802, U.S.A.
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- Experimental Staggered-Source and N+ Pocket-Doped Channel III--V Tunnel Field-Effect Transistors and Their Scalabilities
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