Effect of Input Energy on Si-C Reaction Milling and Sintering Process

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The effect of reaction milling condition on Si-C solid state reaction and sintering process was characterized by breadth and intensity of the peak of SiC lattice plane (111) measured by X-ray diffraction analysis. SiC nano-powder can be synthesized from Si and C elemental powders using a reaction milling process and the milling condition affects the nature of formed SiC such as sintering process, microstructure of sintered body, and so on. In this research, total input energy as a thermodynamic factor on Si-C reaction milling under adiabatic condition were calculated by collision model equation with control factors such as revolution speed, weight ratio of pulverizing ball against powder: B/P and total milling time. The Si-C solid state reaction correlated closely with the calculated total input energy and the reaction to form SiC was completed at the total input energy higher than 2.74×1011 kWh/g. The nano-powder sintered without any additives at the lower temperature of 1700°C to 1800°C compared to the temperature of conventional sintering with sintering agents, 2000°C. These results are described and discussed with X-ray analysis, morphologies and thermodynamic calculation.
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