Photoinduced Structures in Synthetic Fused Silicas with Ultrashort Pulse Laser Irradiation
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概要
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Properties of defects induced by irradiation with near-infrared femtosecond laser into a series of synthetic fused silicas of different OH contents are reported. Comparing with the samples before laser irradiation, two absorption bands centered around at 4.8 eV and 5.8 eV which correspond to E′ (≡Si·) center and non-bridging oxygen hole center (NBOHC, ≡Si-O·), respectively, were evidently observed after laser irradiation in the high-OH silicas. A photoluminescence band with photon energy of 1.9 eV was observed in the as-irradiated silicas under 4.8 eV light excitation. Similar phenomenon occurs when the laser beam was focused near the surface of low-OH silicas. A possible model for the generation of 1.9 eV photoluminescence induced by ultrashort pulse laser was proposed.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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